Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry
نویسندگان
چکیده
Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry" (2015).
منابع مشابه
Measurement of InAsSb bandgap energy and InAs/InAsSb band edgepositions using spectroscopic ellipsometry and photoluminescencespectroscopy
Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy" The structural and optical properties of lattice-matched InAs 0.911 Sb 0.089 bulk layers and strain-balanced InAs/InAs 1Àx Sb x (x $ 0.1–0.4) superlattices grown on (100)-oriented GaSb substrates by molecular beam epitaxy are examined using X-ray diffract...
متن کاملEvidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors
Articles you may be interested in Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices Appl. High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection Appl.
متن کاملMinority Carrier Lifetime in Beryllium - Doped InAs / InAsSb Strained Layer
Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices Report Title Minority carrier lifetimes in undoped and Beryllium-doped Type-2 Ga-free, InAs/InAsSb strained layer superlattices (SLS) with energy gaps as low as 0.165 eV were determined from photoluminescence kinetics. The minority carrier lifetime of 450 ns at 77 K in the undoped SLS confirms a high material ...
متن کاملArea 4 : Electronics : Study of defect levels in InAs / InAsSb type - II superlattice using pressure - dependent photoluminescence
Number of Papers published in peer-reviewed journals: Number of Papers published in non peer-reviewed journals: Final Report: Research Area 4: Electronics: Study of defect levels in InAs/InAsSb type-II superlattice using pressuredependent photoluminescence Report Title We have performed pressure-dependent PL measurements on an InAs/InAs0.86 Sb0.14 T2SL structure. By fitting the measured peak en...
متن کاملSpectroscopic ellipsometry of intentionally disordered superlattices
We characterized the electronic properties of ordered and intentionally disordered GaAs–AlxGa12xAs superlattices, with and without dimer-type correlations in the disorder, by means of spectroscopic ellipsometry in the near band-edge region. The spectra have been compared to the calculate electronic structure. The optical transitions in the various superlattices show specific features related to...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2015